Manufacturer and model:
RTA System, Annealsys, AS-Micro Double Chamber
Rapid Thermal Annealing of Wafers and Dies
- "Maximum Wafer Size: 3"" diameter
- Number of Lamps / Maxium Power: 6 / 15 kW
- Temperature: up to 1250°C
- Temperature Measuring by Thermocouple and Pyrometer
- Ramp Rate: from 0.1 to 250°C/sec
- Annealing Enviroments: N2, O2, N2/H2, Vacuum"
- "Superficial Annealing and Thermal Treatment of Samples
- Shallow Thermal Diffusion"
Si, GaAs, Ge, SiO2, Al2O3
Start of Operation Date: