Dr. Daniel Abou-Ras
Department Structure and Dynamics of Energy Materials, Helmholtz-Zentrum Berlin
This presentation will give an overview of the application of correlative electron microscopy on various materials and devices for solar-energy conversion. It will be shown how to employ electron microscopy techniques on the same material or even on identical positions to reveal microstructure-property relationships. More specifically, recombination at grain boundaries in Cu(In,Ga)Se2 can be quantified, and its impact on the solar-cell performance highlighted by device simulations. Nonradiative recombination at dislocations in Cu(In,Ga)Se2 layers does not seem to be more enhanced than within the film bulk, which is quite remarkable for a semiconductor material. Various electron microscopy techniques can be used to monitor phase-segregation processes in halide perovskite nanoparticles and thin films.