THE HEBREW UNIVERSITY CENTER FOR NANOSCIENCE AND NANOTECHNOLOGY

Plasma Enhanced Chemical Vapour Deposition (PECVD)


Manufacturer and model: Oxford Instruments Plasmalab System 100

KEY FEATURES
  • Top electrode RF driven (MHz and/or kHz); no RF bias on lower (substrate) electrode
  • Substrate sits directly on heated electrode
  • Gas injected into process chamber via "showerhead" gas inlet in the top electrode
  • 0.5-1.0 Torr operating pressure
  • 0.02-0.1 Wcm-2 power density
Benefits
  • Lower temperature processes compared to conventional CVD
  • High temperature processes capability, up to 700C
  • Film stress can be controlled by high/low frequency mixing techniques
  • Dry plasma cleaning process with end-point control removes or reduces need for physical/chemical chamber cleaning
  • Control over stoichiometry via process conditions
  • Offers a wide range of material deposition, including:
  1. SiO2 from Silane or TEOS
  2. Polysilicon
  3. Amorphous silicon
  4. Si3N4
  5. SiC
  6. P and B doping
  7. Si Nanowires
  • Dry pumps
Available process gases:
Ar, N2, N2O, CF4, SiH4, PH3, NH3, CH4, H2, GeH4, B2H6, TEOS.

More information at:
http://www.oxford-instruments.com/products/etching-deposition-growth/processes-techniques/plasma-deposition/pecvd/Pages/pecvd.aspx